| 2N7000BU_Fairchild.pdf |
Title: DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Subject: DATASHEET SEARCH, DATABOOK, COMPONENT, FREE DOWNLOAD SITE
2N7000BU/2N7000TA—AdvancedSmall-SignalMOSFET
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000BU / 2N7000TA Rev. 1.1.0 1
November 2013 | |
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| 2N7000_On.pdf |
Title: 2N7000/2N7002/NDS7002A N-Channel Enhancement Mode Field Effect Transistor
Subject: 2N7000/2N7002/NDS7002A N-Channel Enhancement Mode Field Effect Transistor
To learn more about ON Semiconductor, please visit our website at
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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number | |
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| 2N7000.pdf |
Title: Microsoft Word - 2N7000.doc
UTC 2N7000 MOSFET
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-064,A
N-CHANNEL ENHANCEMENT | |
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| 2N7000_UTC.pdf |
Title: Microsoft Word - 2N7000-C.doc
UNISONIC TECHNOLOGIES CO., LTD
2N7000 Power MOSFET
www.unisonic.com.tw 1 of 5
Copyright © 2011 Unisonic Technologies Co., Ltd. QW-R502-059.C | |
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| 2N7000Z_UTC.pdf |
Title: Microsoft Word - 2N7000Z-a.doc
UNISONIC TECHNOLOGIES CO., LTD
2N7000Z Power MOSFET
www.unisonic.com.tw 1 of 3
Copyright © 2011 Unisonic Technologies Co., Ltd. QW-R502-535.a | |
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| 2N7002K_Hottech.pdf |
Title:
Subject:
2N7002K
1 / 4©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com
MOSFET (N-CHANNEL)
FEATURES | |
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| 2N7002.pdf |
Title: 2N7002 60 V, 300 mA N-channel Trench MOSFET
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology. | |
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| 2SK241_Toshiba.pdf |
2SK241
2003-03-271
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK241 | |
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| 2SK2645.pdf |
Title: 2SK2645.PDF
Subject:
2SK2645-01MR N-channel MOS-FET
FAP-IIS Series 600V 1,2Ω 9A 50W
> Features > Outline Drawing
- High Speed Switching | |
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| AO3401_Hottech.pdf |
Title:
Subject:
1 / 6©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com
LOW VOLTAGE MOSFET (P-CHANNEL)
FEATURES
VDS=-30V,RDS(ON)≤50mΩ@VGS=-10V,ID=-4A | |
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| BC327-xx_NXP.pdf |
Title: BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors
1. Product profile
1.1 General description
PNP general-purpose transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2). | |
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| BC327-xx_Philips.pdf |
DATA SHEET
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 15 | |
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| BC327-xx_Semtech.pdf |
Title: Microsoft Word - BC327~BC328.doc
Dated : 27/12/2007
®
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited | |
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| BC337-xx_NXP.pdf |
Title: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors
1. Product profile
1.1 General description
NPN general-purpose transistors.
[1] Also available in SOT54A and SOT54 variant packages (see Section 2). | |
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| BC337-xx_Philips.pdf |
DATA SHEET
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 15 | |
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| BC337-xx_Semtech.pdf |
Title: Microsoft Word - BC337~BC338.doc
Dated: 17/10/2011 Rev：01
®
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited | |
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| BC546x_CDIL.pdf |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC546, A, B, C
BC547, A. B, C
BC548, A. B, C
TO-92 | |
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| BC546x_Philips.pdf |
DATA SHEET
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 15 | |
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| BC547x_CDIL.pdf |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC546, A, B, C
BC547, A. B, C
BC548, A. B, C
TO-92 | |
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| BC547x_Philips.pdf |
DATA SHEET
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 15 | |
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| BC548x_CDIL.pdf |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC546, A, B, C
BC547, A. B, C
BC548, A. B, C
TO-92 | |
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| BS170.pdf |
Title: BS170 MMBF170 20110312.fm
BS170/MMBF170—N-ChannelEnhancementModeFieldEffectTransistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E2 1
March 2010 | |
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| FDC6506P.pdf |
Title: sot23n.tstT65.T65
Subject: sot23n.tstT65.T65
FDC6506P
FDC6506PRev.C
FDC6506P
Dual P-Channel Logic Level PowerTrench™ MOSFET | |
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| FDV302P.pdf |
Title: FDV302P Digital FET,P-Channel
Subject: FDV302P
October 1997
FDV302P
Digital FET, P-Channel
General Description Features | |
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| G2306A.pdf |
Title: Microsoft Word - G2306A.doc
1/4
ISSUED DATE :2005/01/17
REVISED DATE :2006/07/17C
GG22330066 AA | |
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| G3401.pdf |
Title: Microsoft Word - G3401.doc
CORPORATION
G3401 Page: 1/4
ISSUED DATE :2006/08/31
REVISED DATE : | |
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| GJ9971.pdf |
Title: The DatasheetArchive - Datasheet Search Engine
Subject: http://www.datasheetarchive.com
GJ9971 Page: 1/4
ISSUED DATE :2005/07/21
REVISED DATE :
GGJJ99997711 | |
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| IRF540N_Infineon.pdf |
Title: IRF540NPbF.pmd
IRF540NPbF
HEXFET® Power MOSFET
11/3/03
Parameter Typ. Max. Units | |
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| IRF540N.pdf |
IRF540N
HEXFET® Power MOSFET
03/13/01
Parameter Typ. Max. Units | |
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| IRF540.pdf |
Title: page1.EPS
| |
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| IRF5800.pdf |
Title: IRF5800.pmd
Parameter Max. Units
VDS Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.2 A | |
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| IRF5806PbF_Infineon.pdf |
Title: IRF5806PbF Product Data Sheet
Subject: IRF5806PbF Product Data Sheet
HEXFET® Power MOSFET
04/20/10
IRF5806PbF
Absolute Maximum Ratings | |
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| IRF630.pdf |
Title: page1.EPS
| |
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| IRF7105.pdf |
Title: IRF7105.pmd
IRF7105
HEXFET® Power MOSFET
07/18/03
l Advanced Process Technology | |
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| IRF740.pdf |
Title: N-channel 400V - 0.46 OHM - 10A - TO-220 PowerMESH™ II Power MOSFET
Subject: -
August 2006 Rev 4 1/12
12
IRF740
N-channel 400V - 0.46Ω - 10A TO-220 | |
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| IRF830.pdf |
Title: page1.EPS
| |
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| IRF9530N.pdf |
Title: Irf9530n.p65
IRF9530N
HEXFET® Power MOSFET
PD - 91482C
Fifth Generation HEXFETs from International Rectifier | |
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| IRF9530.pdf |
Title: page1.EPS
| |
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| IRF9540NPbF_Infineon.pdf |
Title: IRF9540NPbF.pmd
IRF9540NPbF
PD - 94790A
www.irf.com 1
01/23/04 | |
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| IRF9630.pdf |
Title: page1.EPS
| |
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| IRFB9N60A.pdf |
Title: Fb9n60a.p65
HEXFET® Power MOSFET
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness. | |
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| IRFP4368_Infineon.pdf |
Title: IRFP4368PbF.pmd
06/02/08
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness | |
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| IRFR(U)9120NPBF_IR.pdf |
Title: IRFR_U9120NPbF.pmd
IRFR9120NPbF
IRFU9120NPbF
HEXFET® Power MOSFET
VDSS = -100V | |
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| IRFZ24NS.pdf |
Title: Fz24nsl
Subject:
IRFZ24NS/L
HEXFET® Power MOSFET
PD - 9.1355B
l Advanced Process Technology | |
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| IRFZ44N_Infineon.pdf |
Title: IRFZ44NPbF Product Data Sheet
Subject: IRFZ44NPbF Product Data Sheet
IRFZ44NPbF
HEXFET® Power MOSFET
09/21/10
Parameter Typ. Max. Units | |
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| IRFZ44N.pdf |
Title: irfz44n.p65
IRFZ44N
HEXFET® Power MOSFET
01/03/01
Parameter Typ. Max. Units | |
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| _PINOUT-IRF-TO220AB.pdf |
Title: F:\!5850800.1_I\!HEXFETS.V\LOWC
Subject:
IRF737LC
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches) | |
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| SI2306_Hottech.pdf |
Title:
Subject:
SI2306
1 / 4©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com
LOW VOLTAGE MOSFET (N-CHANNEL)
FEATURES | |
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| UT2306_UTC.pdf |
Title:
UNISONIC TECHNOLOGIES CO., LTD
UT2306 Power MOSFET
www.unisonic.com.tw 1 of 5
Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-130.E | |
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| UT3401G_UTC.pdf |
Title:
UNISONIC TECHNOLOGIES CO., LTD
UT3401 Power MOSFET
www.unisonic.com.tw 1 of 5
Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-109.F | |
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| VNS3NV04DP-E_ST.pdf |
Title: OMNIFET II fully autoprotected Power MOSFET
Subject: -
September 2013 Doc ID 018529 Rev 2 1/21
1
VNS3NV04DP-E
OMNIFET II | |
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|
| ZVP3306F.pdf |
Title: Corel Ventura - MOSP.PUB
D
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996 | |
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| 2N7002LT1-D.PDF |
Title: 2N7002LT1
© Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 4
1 Publication Order Number:
2N7002LT1/D | |
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| MTP2P50E-D.PDF |
Title: MTP2P50E
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1 Publication Order Number:
MTP2P50E/D | |
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